Contactless thermally stimulated lifetime measurements in detector-grade cadmium zinc telluride

Authors

Royal Kessick, Virginia Commonwealth University
Gary Tepper, Virginia Commonwealth University
Ed Lee, Sandia National Laboratory
Ralph James, Sandia National Laboratory

Document Type

Article

Original Publication Date

2000

Journal/Book/Conference Title

Journal of Applied Physics

Volume

87

DOI

10.1063/1.372193

Comments

Originally published at http://dx.doi.org/10.1063/1.372193

Date of Submission

October 2015

Abstract

Contactless thermally stimulated lifetime measurements were performed on detector-grade Cd_1−xZn_xTe (x∼0.1) crystals using a pulsed lasermicrowavecavityperturbation method. The carrier lifetime decreased from approximately 30 μs at 110 K to 4 μs at 160 K, and then remained relatively constant from 160 to 300 K. The sudden drop in carrier lifetime within a particular temperature range is consistent with the thermal activation of a charge trap with a detrapping time longer than the carrier lifetime. The maximum trap activation temperature and the minimum detrapping time are estimated from the lifetime versus temperature curve to be approximately 160 K and 10⁻⁶ s, respectively.

Rights

Kessick, R., Tepper, G., Lee, E., et al. Contactless thermally stimulated lifetime measurements in detector-grade cadmium zinc telluride. Journal of Applied Physics 87, 2408 (2000). Copyright © 2000 AIP Publishing LLC.

Is Part Of

VCU Chemical and Life Science Engineering Publications