Publications from the Department of Electrical and Computer Engineering, Virginia Commonwealth University.

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Submissions from 2016

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Intra- and Inter-Fractional Variation Prediction of Lung Tumors Using Fuzzy Deep Learning, Seonyeong Park, Suk Jin Lee, Elisabeth Weiss, and Yuichi Motai

Submissions from 2015

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Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, extremely low energy straintronic memory, Hasnain Ahmad, Jayasimha Atulasimha, and Supriyo Bandyopadhyay

Submissions from 2014

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Nanowire-based frequency-selective capacitive photodetector for resonant detection of infrared radiation at room temperature, Saumil Bandyopadhyay

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Energy-efficient magnetoelastic non-volatile memory, Ayan K. Biswas, Supriyo Bandyopadhyay, and Jayasimha Atulasimha

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Properties of the main Mg-related acceptors in GaN from optical and structural studies, B. Monemar, P. P. Paskov, G. Pozina, C. Hemmingsson, J. P. Bergman, S. Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoç, H. Amano, M. Iwaya, and I. Akasaki

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Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells, D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü Özgür, H. Morkoç, and J. H. Leach

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Critical analysis and remedy of switching failures in straintronic logic using Bennett clocking in the presence of thermal fluctuations, Kuntal Roy

Submissions from 2013

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Acoustically assisted spin-transfer-torque switching of nanomagnets: An energy-efficient hybrid writing scheme for non-volatile memory, Ayan K. Biswas, Supriyo Bandyopadhyay, and Jayasimha Atulasimha

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Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells, L. Dong, J. V. Mantese, Vitaliy Avrutin, Ü. Özgür, H. Morkoç, and S. P. Alpay

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Optical studies of strain and defect distribution in semipolar (1(1)over-bar01) GaN on patterned Si substrates, N. Izyumskaya, F. Zhang, S. Okur, T. Selden, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, and H. Morkoç

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Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer, K. Jarašiūnas, S. Nargelas, R. Aleksiejūnas, S. Miasojedovas, M. Vengris, S. Okur, H. Morkoç, Ü Özgür, C. Giesen, Ö. Tuna, and M. Heuken

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Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN, S. Khromov, B. Monemar, Vitaliy Avrutin, Hadis Morkoç, L. Hultman, and G. Pozina

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Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges, N. Killat, M. Montes Bajo, T. Paskova, K. R. Evans, J. Leach, X. Li, Ü. Özgür, Hadis Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. E. Walker, M. Trejo, G. D. Via, J. D. Blevins, and M. Kuball

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Enhanced microwave dielectric tunability of Ba0.5Sr0.5TiO3 thin films grown with reduced strain on DyScO3 substrates by three-step technique, Hongrui Liu, Vitaliy Avrutin, Congyong Zhu, Ümit Özgür, Juan Yang, Changzhi Lu, and Hadis Morkoç

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Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (1101)(1101)()(1101)() GaN revealed from spatially resolved luminescence, S. Okur, S. Metzner, N. Izyumskaya, F. Zhang, Vitaliy Avrutin, C. Karbaum, F. Bertram, J. Christen, Hadis Morkoç, and Ü. Özgür

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Ultra-low-energy non-volatile straintronic computing using single multiferroic composites, Kuntal Roy

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The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes, F. Zhang, X. Li, S. Hafiz, S. Okur, Vitaliy Avrutin, U. Ozgur, Hadis Morkoç, and A. Matulionis

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Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature, C. Y. Zhu, F. Zhang, Romualdo A. Ferreyra, U. Ozgur, and Hadis Morkoç

Submissions from 2012

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Information Processing with Electron Spins, Supriyo Bandyopadhyay

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Hemorrhage Detection and Segmentation in Traumatic Pelvic Injuries, Pavani Davuluri, Jie Wu, Yang Tang, Charles H. Cockrell, Kevin R. Ward, Kayvan Najarian, and Rosalyn H. Hargraves

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Optical and structural studies of homoepitaxially grown m-plane GaN, S. Khromov, B. Monemar, Vitaliy Avrutin, Xing Li, Hadis Morkoç, L. Hultman, and G. Pozina

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Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy, A. V. Kvit, A. B. Yankovich, V. Avrutin, H. Liu, N. Izyumskaya, Ü. H. Özgür, H. Morkoç, and P. M. Voyles

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Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy, H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, A. B. Yankovich, A. V. Kvit, P. M. Voyles, and H. Morkoç

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Donor behavior of Sb in ZnO, H. Y. Liu, N. Izyumskaya, Vitaliy Avrutin, Ü. Özgür, A. B. Yankovich, A. V. Kvit, P. M. Voyles, and H. Morkoç

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Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions, X. Li, Serdal Okur, F. Zhang, S. A. Hafiz, Vitaliy Avrutin, Umit Ozgur, Hadis Morkoç, and K. Jarašiūnas