Nanostructuring induced enhancement of radiation hardness in GaN epilayers

Authors

V. V. Ursaki, Technical Institute of Moldova
I. M. Tiginyanu, Technical Institute of MoldovaFollow
O. Volcuic, Technical Institute of Moldova
V. Popa, Technical Institute of Moldova
V. A. Skuratov, Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research
Hadis Morkoç, Virginia Commonwealth UniversityFollow

Document Type

Article

Original Publication Date

2007

Journal/Book/Conference Title

Applied Physics Letters

Volume

90

Issue

16

DOI of Original Publication

10.1063/1.2723076

Comments

Originally published at http://dx.doi.org/10.1063/1.2723076

Date of Submission

April 2015

Abstract

The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ion irradiation was studied by means of photoluminescence(PL) and resonant Raman scattering (RRS) spectroscopy. A nanostructuring induced enhancement of the GaN radiation hardness by more than one order of magnitude was derived from the PL and RRS analyses. These findings show that electrochemical nanostructuring of GaN layers is a potentially attractive technology for the development of radiation hard devices.

Rights

Ursaki, V. V., Tiginyanu, I. M., Volciuc, O., et al. Nanostructuring induced enhancement of radiation hardness in GaN epilayers. Applied Physics Letters, 90, 161908 (2007). Copyright © 2007 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications