Band offset measurements of ZnO∕6H-SiC heterostructure system

Authors

Ya. I. Alivov, Virginia Commonwealth UniversityFollow
Bo Xiao, Virginia Commonwealth UniversityFollow
Q. Fan, Virginia Commonwealth University
Hadis Morkoç, Virginia Commonwealth UniversityFollow
D. Johnstone, SEMETROL

Document Type

Article

Original Publication Date

2006

Journal/Book/Conference Title

Applied Physics Letters

Volume

89

Issue

15

DOI of Original Publication

10.1063/1.2360924

Comments

Originally published at http://dx.doi.org/10.1063/1.2360924

Date of Submission

April 2015

Abstract

The conduction band offset of n-ZnO∕n-6H-SiCheterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured by a variety of methods. Temperature dependent current-voltage characteristic, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25, 1.1, and 1.22eV, respectively.

Rights

Alivov, Ya.I., Xiao, B., Fan, Q., et al. Band offset measurements of ZnO∕6H-SiC heterostructure system. Applied Physics Letters, 89, 152115 (2006). Copyright © 2006 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications