Near-infrared wavelength intersubband transitions in GaN∕AlN short period superlattices

Authors

E. D. DeCuir Jr., University of Arkansas - Main Campus
Emil Fred, University of Arkansas - Main Campus
B. S. Passmore, University of Arkansas - Main Campus
A. Muddasani, University of Arkansas - Main Campus
M. O. Manasreh, University of Arkansas - Main CampusFollow
Jinqiao Xie, Virginia Commonwealth University
Hadis Morkoç, Virginia Commonwealth UniversityFollow
M. E. Ware, University of Arkansas - Main Campus
G. J. Salamo, University of Arkansas - Main Campus

Document Type

Article

Original Publication Date

2006

Journal/Book/Conference Title

Applied Physics Letters

Volume

89

Issue

15

DOI of Original Publication

10.1063/1.2358929

Comments

Originally published at http://dx.doi.org/10.1063/1.2358929

Date of Submission

April 2015

Abstract

Intersubband transitions in GaN∕AlN short period superlattices prepared by molecular beam epitaxy were investigated using the optical absorption technique. The peak position wavelengths of these transitions are found to span the spectral range of 1.35–2.90μm for samples cut into 45° waveguides with GaNquantum well thicknesses ranging between 1.70 and2.41nm. The Fermi energy levels are estimated from the carrier concentrations, which were measured using an electrochemical capacitance-voltage profiler. The well widths were inferred from comparing the measured peak position energy of the intersubband transitions and the bound state energy levels calculated using the transfer matrix method.

Rights

DeCuir, E.A., Fred, E., Passmore, B.S., et al. Near-infrared wavelength intersubband transitions in GaN∕AlN short period superlattices. Applied Physics Letters, 89, 151112 (2006). Copyright © 2006 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications