Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density

Authors

K. T. Tsen, Arizona State University at the Tempe CampusFollow
Juliann G. Kiang, Walter Reed Army Institute of Research, Uniformed Services University of The Health Services
D. K. Ferry, Arizona State University at the Tempe Campus
Hadis Morkoç, Virginia Commonwealth UniversityFollow

Document Type

Article

Original Publication Date

2006

Journal/Book/Conference Title

Applied Physics Letters

Volume

89

Issue

11

DOI of Original Publication

10.1063/1.2349315

Comments

Originally published at http://dx.doi.org/10.1063/1.2349315

Date of Submission

April 2015

Abstract

Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from1016to2×1019cm−3 . The lifetime has been found to decrease from 2.5ps , at low density, to0.35ps , at the highest density. The experimental findings should help resolve the recent controversy over the lifetime of LO phonon mode in GaN.

Rights

Tsen, K.T., Kiang, J.G., Ferry, D.K., et al. Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density. Applied Physics Letters, 89, 112111 (2006). Copyright © 2006 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications