Effect of n+-GaN subcontact layer on 4H–SiC high-power photoconductive switch

Authors

K. Zhu, Virginia Commonwealth University, Tech Explore, LLC
S. Doğan, Virginia Commonwealth University
Y.-T. Moon, Virginia Commonwealth University
J. Leach, Virginia Commonwealth University
F. Yun, Virginia Commonwealth University
D. Johnstone, Virginia Commonwealth University
Hadis Morkoç, Virginia Commonwealth UniversityFollow
G. Li, Air Force Institute of Technology, Tech Explore, LLC
B. Ganguly, Air Force Research Laboratory

Document Type

Article

Original Publication Date

2005

Journal/Book/Conference Title

Applied Physics Letters

Volume

86

Issue

26

DOI of Original Publication

10.1063/1.1951056

Comments

Originally published at http://dx.doi.org/10.1063/1.1951056

Date of Submission

April 2015

Abstract

High-power photoconductive semiconductor switching devices were fabricated on 4H–SiC. In order to prevent current crowding, reduce the contact resistance, and avoid contact degradation, a highly n-doped GaN subcontact layer was inserted between the contact metal and the high resistivity SiC bulk. This method led to a two orders of magnitude reduction in the on-state resistance and, similarly, the photocurrent efficiency was increased by two orders of magnitude with the GaN subcontact layer following the initial high current operation. Both dry etching and wet etching were used to remove the GaN subcontact layer in the channel area. Wet etching was found to be more suitable than dry etching.

Rights

Zhu, K., Doğan, S., Moon, Y.-T., et al. Effect of n+-GaN subcontact layer on 4H–SiC high-power photoconductive switch. Applied Physics Letters, 86, 261108 (2005). Copyright © 2005 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications