Document Type
Article
Original Publication Date
2014
Journal/Book/Conference Title
Applied Physics Letters
Volume
104
Issue
23
DOI of Original Publication
10.1063/1.4882276
Date of Submission
March 2015
Abstract
We propose an improved scheme for low-power writing of binary bits in non-volatile (multiferroic) magnetic memory with electrically generated mechanical stress. Compared to an earlier idea [N. Tiercelin et al., J. Appl. Phys. 109, 07D726 (2011)], our scheme improves distinguishability between the stored bits when the latter are read with magneto-tunneling junctions. More importantly, the write energy dissipation and write error rate are reduced significantly if the writing speed is kept the same. Such a scheme could be one of the most energy-efficient approaches to writing bits in magnetic non-volatile memory. (C) 2014 AIP Publishing LLC.
Rights
Biswas, A.K., Bandyopadhyay, S., Atulasimha, J. Energy-efficient magnetoelastic non-volatile memory. Applied Physics Letters, 104, 232403 (2014). Copyright © 2014 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.4882276