Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering

Authors

Patrick A. Grandt, University of Arkansas - Main Campus
Aureus E. Griffith, University of Arkansas - Main Campus
M. O. Manasreh, University of Arkansas - Main CampusFollow
D. J. Friedman, National Renewable Energy Laboratory
S. Doğan, Virginia Commonwealth University
D. Johnstone, Virginia Commonwealth UniversityFollow

Document Type

Article

Original Publication Date

2004

Journal/Book/Conference Title

Applied Physics Letters

Volume

85

Issue

21

DOI of Original Publication

10.1063/1.1823014

Comments

Originally published at http://dx.doi.org/10.1063/1.1823014

Date of Submission

April 2015

Abstract

Raman scattering from longitudinal optical phonon-plasmon coupled mode was observed in a series of InGaAsN∕GaAs single quantum well samples grown by metalorganic vapor phase epitaxy. The phonon-plasmon mode spectra were fitted with the dielectric constant function based on Drude model that contains contributions from both lattice vibrations and conduction electrons. The carrier concentration is calculated directly from the plasmon frequency, which is obtained from the fitting procedure. An empirical expression for the electron concentration, [n], in InGaAsN∕GaAs samples is determined as [n]≈{2.35×1016(ωm−502)}cm−3, where ωm is the peak of the upper frequency branch, L+, of the phonon-plasmon mode measured in unit of cm−1. The phonon-plasmon coupled mode was also investigated in rapid thermally annealed samples.

Rights

Grandt, P.A., Griffith, A.E., Manasreh, M.O., et al. Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering. Applied Physics Letters, 85, 4905 (2004). Copyright © 2004 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications