Reexamination of some spintronic field-effect device concepts

Authors

S. Bandyopadhyay, Virginia Commonwealth UniversityFollow
M. Cahay, University of Cincinnati - Main Campus

Document Type

Article

Original Publication Date

2004

Journal/Book/Conference Title

Applied Physics Letters

Volume

85

Issue

8

DOI of Original Publication

10.1063/1.1784042

Comments

Originally published at http://dx.doi.org/10.1063/1.1784042

Date of Submission

April 2015

Abstract

Current interest in spintronics is largely motivated by a belief that spin-based devices (e.g., spin field-effect transistors) will be faster and consume less power than their electronic counterparts. Here we show that this is generally untrue. Unless materials with extremely strong spin-orbit interaction can be developed, the spintronic devices will not measure up to their electronic cousins. We also show that some recently proposed modifications of the original spin field-effect transistor concept of Datta and Das [Appl. Phys. Lett.56, 665 (1990)] actually lead to worse performance than the original construct.

Rights

Bandyopadhyay, S., and Cahay, M. Reexamination of some spintronic field-effect device concepts. Applied Physics Letters, 85, 1433 (2004). Copyright © 2004 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications