Document Type
Article
Original Publication Date
2007
Journal/Book/Conference Title
Journal of Applied Physics
Volume
101
Issue
9
DOI of Original Publication
10.1063/1.2712295
Date of Submission
November 2015
Abstract
BaO(Fe2O3)6 (BaM) thin films were deposited by pulsed laser deposition on GaN∕Al2O3 substrates. A pole figure obtained from the (006) reflection indicated that ∼81% of the film volume had the c axis tilted less than 5° from the film normal. A low anisotropy field was inferred from vector coil vibrating sample magnetometer (VVSM) measurements. The reduction in Hafrom literature values and a two-step switching of the easy axis magnetization is postulated to result from interdiffusion and misalignment effects. To alleviate interdiffusion and to improve the c-axis alignment, experiments were repeated with lower deposition temperatures, thinner films, and MgO buffer layers. The features of the hysteresis loop due to two-step switching and the in-plane coercivity were reduced while the anisotropy field (Ha) was larger. Films deposited with MgO buffer layers are observed to have single-step switching of the easy axis magnetization, larger anisotropy fields, and sharp ferromagnetic resonance (FMR) peaks. Films with MgO buffer layers were determined to have anisotropy fields Ha=1.57T by FMR and Ha∼1.5–1.6Tas determined from the difference in the saturation fields for the easy and hard axis loops.
Rights
Ohodnicki, P. R., Goh, K. Y., & Hanlumyuang, Y., et al. Magnetic anisotropy and crystalline texture in BaO(Fe2O3)(6) thin films deposited on GaN/Al2O3. Journal of Applied Physics, 101, 09M521 (2007). Copyright © 2007 American Institute of Physics.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.2712295