Document Type
Article
Original Publication Date
2009
Journal/Book/Conference Title
Journal of Applied Physics
Volume
106
Issue
10
DOI of Original Publication
10.1063/1.3253746
Date of Submission
October 2015
Abstract
Energy relaxation and electron-phonon (e-p) interaction are investigated in wurtzite Al0.15Ga0.85N/AlN/GaN and Al0.83In0.17N/AlN/GaN heterostructures with polarization induced two-dimensional electron gases in the Bloch–Grüneisen regime. Weak antilocalization (WAL) and Shubnikov–de Haas measurements were performed on gated Hall bar structures at temperatures down to 0.3 K. We used WAL as a thermometer to measure the electron temperature Te as a function of the dc bias current. We found that the power dissipated per electron, Pe, was proportional to T4e due to piezoelectric acoustic phonon emission by hot electrons. We calculated Pe as a function of Te without any adjustable parameters for both the static and the dynamic screening cases of piezoelectric e-p coupling. In the temperature range of this experiment, the static screening case was expected to be applicable; however, our data was in better agreement with the dynamic screening case.
Rights
Cheng, H., Biyikli, N., & Xie, J., et al. Energy relaxation probed by weak antilocalization measurements in GaN heterostructures. Journal of Applied Physics, 106, 103702 (2009). Copyright © 2009 American Institute of Physics.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.3253746