Original Publication Date
Journal of Applied Physics
DOI of Original Publication
Date of Submission
Thick (∼900 nm) GaN layers were grown by molecular beam epitaxy on cost-effective Sc2O3/Y2O3/Si(111) substrates and characterized by x-ray diffraction and photoluminescence. Samples grown in Ga-rich condition show superior structural and optical quality with reduced density of cubic GaN inclusions within the hexagonal matrix and a relatively strong photoluminescence emission at 3.45 eV at 10 K. Cubic inclusions are formed in the initial growth stage and their concentration is reduced with increasing film thickness and after rapid thermal annealing.
Tarnawska, L., Zaumseil, P., & Schubert, M. A., et al. Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111). Journal of Applied Physics, 111, 073509 (2012). Copyright © 2012 American Institute of Physics.
Is Part Of
VCU Electrical and Computer Engineering Publications