Document Type

Article

Original Publication Date

2006

Journal/Book/Conference Title

Journal of Applied Physics

Volume

99

Issue

3

DOI of Original Publication

10.1063/1.2170422

Comments

Originally published at http://dx.doi.org/10.1063/1.2170422

Date of Submission

October 2015

Abstract

We report on the effectiveness of porous TiN nanonetworks on the reduction of threading dislocations (TDs) in GaN grown by metal-organic vapor-phase epitaxy (MOVPE). The porous TiN networks were formed by in situ annealing of thin-deposited Ti films deposited ex situ on GaN templates within the MOVPE growth chamber. Different annealing parameters in relation to surface porosity of TiN networks were investigated. Transmission electron micrographs indicated dislocation reduction by factors of up to 10 in GaN layers grown on the TiN nanonetwork, compared with a control sample. TiN prevented many dislocations present in the GaN templates from penetrating into the upper layer. Microscale epitaxial lateral overgrowth of GaN above TiN also contributed to TD reduction. The surface porosity of the TiN network had a strong impact on the efficiency of TD reduction. X-ray-diffraction and time-resolved photoluminescence measurements further confirmed the improved GaN quality.

Rights

Fu, Y., Yun, F., Moon, Y. T., et al. Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy. Journal of Applied Physics 99, 033518 (2006). Copyright © 2006 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications

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