Well-width dependence of the ground level emission of GaN/AlGaN quantum wells

Authors

A. Bonfiglio, University of Lecce
M. Lomascolo, University of Lecce
G. Traetta, University of Lecce
R. Cingolani, University of Lecce
A. Di Carlo, University of Roma "Tor Vergata"
F. Della Sala, University of Roma "Tor Vergata"
P. Lugli, University of Roma "Tor Vergata"
A. Botchkarev, Virginia Commonwealth University
H. Morkoç, Virginia Commonwealth University

Document Type

Article

Original Publication Date

2000

Journal/Book/Conference Title

Journal of Applied Physics

Volume

87

Issue

5

DOI of Original Publication

10.1063/1.372175

Comments

Originally published at http://dx.doi.org/10.1063/1.372175

Date of Submission

October 2015

Abstract

We have performed a systematic investigation of GaN/AlGaN quantum wells grown on different buffer layers (either GaN or AlGaN) in order to clarify the role of strain, structural parameters, and built-in field in determining the well-width dependence of the ground level emission energy. We find that identical quantum wells grown on different buffer layers exhibit strong variation of the ground level energy but similar well-width dependence. The data are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight binding model.

Rights

Bonfiglio, A., Lomascolo, M., Traetta, G., et al. Well-width dependence of the ground level emission of GaN/AlGaN quantum wells. Journal of Applied Physics 87, 2289 (2000). Copyright © 2000 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications