Document Type

Article

Original Publication Date

2006

Journal/Book/Conference Title

Physical Review B

Volume

74

Issue

23

DOI of Original Publication

10.1103/PhysRevB.74.235329

Comments

Originally published by the American Physical Society at: http://dx.doi.org/10.1103/PhysRevB.74.235329

Note: This article also had an erratum with a corrected publication date: http://dx.doi.org/10.1103/PhysRevB.75.039902

Date of Submission

May 2015

Abstract

We have observed both peaks and troughs in the magnetoresistance of organic nanowires consisting of three layers—cobalt, 8-hydroxy-quinolinolato aluminum (Alq3), and nickel. They always occur between the coercive fields of the ferromagnetic layers, and we attribute them to the normal and inverse spin-valve effect. The latter is caused by resonant tunneling through localized impurity states in the organic material. Peaks are always found to be accompanied by a positive monotonic background magnetoresistance, while troughs are accompanied by a negative monotonic background magnetoresistance. This curious correlation suggests that the background magnetoresistance, whose origin has hitherto remained unexplained, is probably caused by the recently proposed phenomenon of magnetic-field-induced enhancement of spin-flip scattering in the presence of spin-orbit interaction.

Rights

Pramanik, S., Bandyopadhyay, S., Garre, K., et al. Normal and inverse spin-valve effect in organic semiconductor nanowires and the background monotonic magnetoresistance. Physical Review B, 74, 235329 (2006). Copyright © 2006 American Physical Society.

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VCU Electrical and Computer Engineering Publications

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