Document Type

Article

Original Publication Date

2010

Journal/Book/Conference Title

Physical Review B

Volume

81

Issue

15

DOI of Original Publication

10.1103/PhysRevB.81.153202

Comments

Originally published by the American Physical Society at: http://dx.doi.org/10.1103/PhysRevB.81.153202

Date of Submission

April 2015

Abstract

Despite the recent interest in “organic spintronics,” the dominant spin relaxation mechanism of electrons or holes in an organic compound semiconductor has not been conclusively identified. There have been sporadic suggestions that it might be hyperfine interaction caused by background nuclear spins, but no confirmatory evidence to support this has ever been presented. Here, we report the electric-field dependence of the spin-diffusion length in an organic spin-valve structure consisting of an Alq3 spacer layer, and argue that these data, as well as the available data on the temperature dependence of this length, contradict the notion that hyperfine interactions relax spin. Instead, they suggest that the Elliott-Yafet mechanism, arising from spin-orbit interaction, is more likely the dominant spin relaxing mechanism.

Rights

Bandyopadhyay, S. Dominant spin relaxation mechanism in compound organic semiconductors. Physical Review B, 81, 153202 (2010). Copyright © 2010 American Physical Society.

Is Part Of

VCU Electrical and Computer Engineering Publications

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