Document Type

Article

Original Publication Date

2012

Journal/Book/Conference Title

Applied Physics Letters

Volume

101

Issue

10

DOI of Original Publication

10.1063/1.4751037

Comments

Originally published at http://dx.doi.org/10.1063/1.4751037

Date of Submission

March 2015

Abstract

In15.7%Al84.3%N/AlN/GaN heterojunctionfield effect transistors have been electrically stressed under four different bias conditions: on-state-low-field stress, reverse-gate-bias stress, off-state-high-field stress, and on-state-high-field stress, in an effort to elaborate on hot electron/phonon and thermal effects. DC current and phase noise have been measured before and after the stress. The possible locations of the failures as well as their influence on the electrical properties have been identified. The reverse-gate-bias stress causes trap generation around the gate area near the surface which has indirect influence on the channel. The off-state-high-field stress and the on-state-high-field stress induce deterioration of the channel, reduce drain current and increase phase noise. The channel degradation is ascribed to the hot-electron and hot-phonon effects.

Rights

Zhu, C.Y., Wu, M., Kayis, C., et al. Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects. Applied Physics Letters, 101, 103502 (2012). Copyright © 2012 AIP Publishing LLC.

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VCU Electrical and Computer Engineering Publications

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