Optical and structural studies of homoepitaxially grown m-plane GaN

Authors

S. Khromov, Linköping University
B. Monemar, Linköping University
Vitaliy Avrutin, Virginia Commonwealth UniversityFollow
Xing Li, Virginia Commonwealth University
Hadis Morkoç, Virginia Commonwealth UniversityFollow
L. Hultman, Linköping University
G. Pozina, Linköping University

Document Type

Article

Original Publication Date

2012

Journal/Book/Conference Title

Applied Physics Letters

Volume

100

Issue

17

DOI of Original Publication

10.1063/1.4706258

Comments

Originally published at http://dx.doi.org/10.1063/1.4706258

Date of Submission

March 2015

Abstract

Cathodoluminescence(CL) and transmission electron microscopy studies of homoepitaxiallygrownm-plane Mg-doped GaN layers are reported. Layers contain basal plane and prismatic stacking faults (SFs) with ∼10⁶cm⁻¹ density. Broad emission peaks commonly ascribed to SFs were found to be insignificant in these samples. A set of quite strong, sharp lines were detected in the same spectral region of 3.36–3.42 eV. The observed peaks are tentatively explained as excitons bound to some impurity defects, which can also be related to SFs. Donor-acceptor pair (DAP) recombination involving Si or O and Mg was ruled out by fitting DAP energies and CL mapping.

Rights

Khromov, S., Monemar, B., Avrutin, V., et al. Optical and structural studies of homoepitaxially grown m-plane GaN. Applied Physics Letters, 100, 172108 (2012). Copyright © 2012 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications