Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template

Authors

Michael A. Reshchikov, Virginia Commonwealth UniversityFollow
D. Huang, Virginia Commonwealth University
F. Yun, Virginia Commonwealth University
L. He, Virginia Commonwealth University
Hadis Morkoç, Virginia Commonwealth UniversityFollow
D. C. Reynolds, Wright State University
S. S. Park, Samsung Advanced Institute of Technology
K. Y. Lee, Samsung Advanced Institute of Technology

Document Type

Article

Original Publication Date

2001

Journal/Book/Conference Title

Applied Physics Letters

Volume

79

Issue

23

DOI of Original Publication

10.1063/1.1421421

Comments

Originally published at http://dx.doi.org/10.1063/1.1421421

Date of Submission

April 2015

Abstract

Photoluminescence(PL) studies were performed on a 1.5-μm-thick GaN layer grown by molecular-beam epitaxy on a freestanding GaN template that in turn was grown by hydride vapor-phase epitaxy.PL spectra from both the epilayer and the substrate contain a plethora of sharp peaks related to excitonic transitions. We identified the main peaks in the PL spectrum. Taking advantage of the observation of donor bound exciton peaks and their associated two-electron satellites, we have determined the binding energies of two distinct shallow donors (28.8 and 32.6 meV), which are attributed to Si and O, respectively.

Rights

Reshchikov, M.A., Huang, D., Yun, F., et al. Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template. Applied Physics Letters, 79, 3779 (2001). Copyright © 2001 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications