Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
AlxGa1−xN films were grown by plasma-assisted molecular-beam epitaxy on (0001)sapphire substrates under Ga-rich conditions. To control the AlxGa1−xN composition over the entire range, the Al and Ga arrival rates were fixed while the nitrogen arrival rate was varied. We have found that the Al fraction increased with decreasing N flow due to preferentially favorable bonding of Al and N over Ga and N. Consequently, the growth rate decreased as the Al mole fraction increased. A photoluminescence quantum efficiency at 15 K was markedly higher for the AlxGa1−xN layers grown under Ga-rich conditions (3%–48%) compared to the layers grown under N-rich conditions (1%–10%), indicating much reduced nonradiative recombination in samples grown under Ga-rich conditions.
He, L., Reshchikov, M.A., Yun, F., et al. Properties of AlxGa1−xN layers grown by plasma-assisted molecular-beam epitaxy under Ga-rich conditions. Applied Physics Letters, 81, 2178 (2002). Copyright © 2002 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications