Document Type
Article
Original Publication Date
2010
Journal/Book/Conference Title
Applied Physics Letters
Volume
97
Issue
22
DOI of Original Publication
10.1063/1.3515419
Date of Submission
April 2015
Abstract
The surface plasmon (SP) energy for resonant enhancement of light has shown to be modified by the epitaxial substrate and the overlying metalthin film. The modification of SP energy in AlGaN/GaN epitaxial layers is studied using spectroscopic ellipsometry for enhanced UV-light emission. Silver induced SP can be extended to the UV wavelength range by increasing the aluminum concentration in AlxGa1−xN epilayer. A threefold increase in the UV-light emission is observed from AlGaN/GaN quantum well due to silver induced SP. Photoluminescence lifetime measurements confirm the resonant plasmon induced increase in Purcell factor as observed from the PL intensity measurements.
Rights
Lin, J., Mohammadizia, A., Neogi, A., et al. Surface plasmon enhanced UV emission in AlGaN/GaN quantum well. Applied Physics Letters, 97, 221104 (2010). Copyright © 2010 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.3515419