Document Type
Article
Original Publication Date
2010
Journal/Book/Conference Title
Applied Physics Letters
Volume
97
Issue
11
DOI of Original Publication
10.1063/1.3490248
Date of Submission
April 2015
Abstract
Magnetotransport measurements on an In0.16Al0.84N/AlN/GaN gated Hall bar sample have been performed at 0.28 K. By the application of a gate voltage we were able to vary the total two-dimensional electron gas density from 1.83×1013 to 2.32×1013 cm−2. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands by electrons. The density of electrons in the first and second sublevels are found to increase linearly with gate voltage with a slope of 2.01×1012 cm−2/V and 0.47×1012 cm−2/V, respectively. And the quantum lifetimes for the first and second subbands ranged from 0.55 to 0.95×10−13 s and from 1.2 to 2.1×10−13 s.
Rights
Cheng, H., Kurdak, C., Leach, J.H. Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure. Applied Physics Letters, 97, 112113 (2010). Copyright © 2010 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.3490248