Document Type
Article
Original Publication Date
2002
Journal/Book/Conference Title
Applied Physics Letters
Volume
81
Issue
26
Date of Submission
April 2015
Abstract
Photoluminescence of the dominant deep-level acceptor in high-purity freestanding GaN is studied over a wide range of excitation intensities. A yellow luminescence (YL) band at about 2.2 eV saturates with increasing excitation intensity, whereas a green luminescence (GL) band at about 2.5 eV increases as a square of the excitation intensity. The YL and GL bands are attributed to two charge states of the same defect, presumably a gallium vacancy-oxygen complex.
Rights
Reshchikov, M.A., Morkoç, H., Park, S.S., et al. Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study. Applied Physics Letters, 81, 4970 (2002). Copyright © 2002 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at 10.1063/1.1531227