4H–SiC photoconductive switching devices for use in high-power applications

Authors

S. Doǧan, Virginia Commonwealth University
A. Teke, Virginia Commonwealth University
D. Huang, Virginia Commonwealth University
Hadis Morkoç, Virginia Commonwealth UniversityFollow
C. B. Roberts, Limited Liability Corporation
J. Parish, Air Force Research Laboratory
B. Ganguly, Air Force Research Laboratory
M. Smith, University of South Florida
R. E. Meyers, University of South Florida
S. E. Saddow, University of South Florida

Document Type

Article

Original Publication Date

2003

Journal/Book/Conference Title

Applied Physics Letters

Volume

82

Issue

18

DOI of Original Publication

10.1063/1.1571667

Comments

Originally published at http://dx.doi.org/10.1063/1.1571667

Date of Submission

April 2015

Abstract

Siliconcarbide is a wide-band-gapsemiconductor suitable for high-power high-voltage devices and it has excellent properties for use in photoconductive semiconductor switches (PCSSs). PCSS were fabricated as planar structures on high-resistivity 4H–SiC and tested at dc bias voltages up to 1000 V. The typical maximum photocurrent of the device at 1000 V was about 49.4 A. The average on-state resistance and the ratio of on-state to off-state currents were about 20 Ω and 3×1011, respectively. Photoconductivity pulse widths for all applied voltages were 8–10 ns. These excellent results are due in part to the removal of the surface damage by high-temperature H2 etching and surface preparation. Atomic force microscopy images revealed that very good surface morphology, atomic layer flatness, and large step width were achieved.

Rights

Doǧan, S., Teke, A., Huang, D., et al. 4H–SiC photoconductive switching devices for use in high-power applications. Applied Physics Letters, 82, 3107 (2003). Copyright © 2003 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications