Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
We report measurements of the Schottky barrier heights of Ni/Au contacts on Ga-polarity and N-polarity n-GaN under hydrostatic pressure and applied in-plane uniaxial stress. Under hydrostatic pressure the two different polarities of GaN yield significantly different rates of Schottky barrier height increase with increasing pressure. Uniaxial stress parallel to the surface affects the Schottky barrier height only minimally. The observed changes in barrier height under stress are attributed to a combination of band structure and piezoelectric effects.
Liu, Y., Kauser, M.Z., Nathan, M.I., et al. Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN. Applied Physics Letters, 84, 2112 (2004). Copyright © 2004 AIP Publishing LLC.
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VCU Electrical and Computer Engineering Publications