Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Authors

N. Killat, H. H. Wills Physics LaboratoryFollow
M. Montes Bajo, H. H. Wills Physics Laboratory
T. Paskova, Kyma Technologies, North Carolina State University
K. R. Evans, Kyma Technologies
J. Leach, Kyma Technologies, Virginia Commonwealth Univeristy
X. Li, Virginia Commonwealth University
Ü. Özgür, Virginia Commonwealth University
Hadis Morkoç, Virginia Commonwealth UniversityFollow
K. D. Chabak, Air Force Research Laboratory
A. Crespo, Air Force Research Laboratory
J. K. Gillespie, Air Force Research Laboratory
R. Fitch, Air Force Research Laboratory
M. Kossler, Air Force Research Laboratory
D. E. Walker, Air Force Research Laboratory
M. Trejo, Air Force Research Laboratory
G. D. Via, Air Force Research Laboratory
J. D. Blevins, Air Force Research Laboratory
M. Kuball, H.H. Wills Laboratory

Document Type

Article

Original Publication Date

2013

Journal/Book/Conference Title

Applied Physics Letters

Volume

103

Issue

19

DOI of Original Publication

10.1063/1.4829062

Comments

Originally published at http://dx.doi.org/10.1063/1.4829062

Date of Submission

March 2015

Abstract

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gateleakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths.Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges ofsurface steps.

Rights

Killat, N., Bajo, M. M., Paskova, T., et al., Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges. Applied Physics Letters, 103, 193507 (2013). Copyright © 2013 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications