Publications from the Department of Electrical and Computer Engineering, Virginia Commonwealth University.

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Submissions from 2003

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Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures, Qiaoying Zhou, Jiayu Chen, B. Pattada, M. O. Manasreh, Faxian Xiu, Steve Putigan, K. S. Ramaiah, and Hadis Morkoç

Submissions from 2002

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Properties of AlxGa1−xN layers grown by plasma-assisted molecular-beam epitaxy under Ga-rich conditions, L. He, Michael A. Reshchikov, F. Yun, D. Huang, T. King, and Hadis Morkoç

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Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy, D. Huang, Michael A. Reshchikov, F. Yun, T. King, A. A. Baski, and Hadis Morkoç

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Room-temperature single-electron charging in electrochemically synthesized semiconductor quantum dot and wire array, N. Kouklin, L. Menon, and Supriyo Bandyopadhyay

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Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study, Michael A. Reshchikov, Hadis Morkoç, S. S. Park, and K. Y. Lee

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Energy band bowing parameter in AlxGa1-xN alloys, Feng Yun, Michael A. Reshchikov, Lei He, Thomas King, Hadis Morkoç, Steve W. Novak, and Luncun Wei

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Growth of GaN films on porous SiC substrate by molecular-beam epitaxy, F. Yun, Michael A. Reshchikov, L. He, Hadis Morkoç, C. K. Inoki, and T. S. Kuan

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Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain, S. K. Zhang, W. B. Wang, I. Shtau, F. Yun, L. He, Hadis Morkoç, X. Zhou, M. Tamargo, and R. R. Alfano

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Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells, S. K. Zhang, W. B. Wang, F. Yun, L. He, Hadis Morkoç, X. Zhou, M. Tamargo, and R. R. Alfano

Submissions from 2001

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Deep centers in a free-standing GaN layer, Z.-Q. Fang, D. C. Look, P. Visconti, D.-F. Wang, C.-Z. Lu, F. Yun, Hadis Morkoç, S. S. Park, and K. Y. Lee

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Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy, D. Huang, P. Visconti, K. M. Jones, Michael A. Reshchikov, F. Yun, A. A. Baski, T. King, and Hadis Morkoç

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Characterization of free-standing hydride vapor phase epitaxy GaN, J. Jasinski, W. Sider, Z. Lilental-Weber, P. Visconti, K. M. Jones, Michael A. Reshchikov, F. Yun, Hadis Morkoç, S. S. Park, and K. Y. Lee

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Giant photoresistivity and optically controlled switching in self-assembled nanowires, N. Kouklin, L. Menon, A. Z. Wong, D. W. Thompson, J. A. Woollam, P. F. Williams, and Supriyo Bandyopadhyay

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Systematic measurement of AlxGa1−xN refractive indices, Ü. Özgür, Grady Webb-Wood, Henry O. Everitt, Feng Yun, and Hadis Morkoç

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Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template, Michael A. Reshchikov, D. Huang, F. Yun, L. He, Hadis Morkoç, D. C. Reynolds, S. S. Park, and K. Y. Lee

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Transient photoluminescence of defect transitions in freestanding GaN, Michael A. Reshchikov, Hadis Morkoç, S. S. Park, and K. Y. Lee

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Yellow and green luminescence in a freestanding GaN template, Michael A. Reshchikov, Hadis Morkoç, S. S. Park, and K. Y. Lee

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Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy, Michael A. Reshchikov, P. Visconti, and Hadis Morkoç

Submissions from 2000

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Well-width dependence of the ground level emission of GaN/AlGaN quantum wells, A. Bonfiglio, M. Lomascolo, G. Traetta, R. Cingolani, A. Di Carlo, F. Della Sala, P. Lugli, A. Botchkarev, and H. Morkoç

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Bias-assisted photoelectrochemical etching of p-GaN at 300 K, J. E. Borton, C. Cai, M. I. Nathan, P. Chow, J. M. Van Hove, A. Wowchak, and Hadis Morkoç

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Observation of electronic Raman scattering from Mg-doped wurtzite GaN, K. T. Tsen, C. Koch, Y. Chen, Hadis Morkoç, J. Li, J. Y. Lin, and H. X. Jiang

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Dislocation density in GaN determined by photoelectrochemical and hot-wet etching, P. Visconti, K. M. Jones, Michael A. Reshchikov, R. Cingolani, Hadis Morkoç, and R. J. Molnar

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Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration, P. Visconti, K. M. Jones, Michael A. Reshchikov, F. Yun, R. Cingolani, Hadis Morkoç, S. S. Park, and K. Y. Lee

Submissions from 1999

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Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN, Tomasz J. Ochalski, Bernard Gil, Pierre Lefebvre, Nicolas Grandjean, Mathieu Leroux, Jean Massies, Shuji Nakamura, and Hadis Morkoç

Submissions from 1998

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Deep centers in n-GaN grown by reactive molecular beam epitaxy, Z.-Q. Fang, D. C. Look, W. Kim, Z. Fan, A. Botchkarev, and Hadis Morkoç