Defense Date

2004

Document Type

Thesis

Degree Name

Master of Science

Department

Electrical Engineering

First Advisor

Dr. Hadis Morkoc

Abstract

Different methods were developed for the preparation of bulk ZnO substrates. Remarkable improvement on the surface, optical and crystalline quality of the bulk ZnO substrate was achieved. ZnO substrates with an atomically flat surface exhibiting terrace-like features were used as a substrate for GaN grown by MBE. High-resolution x-ray diffraction and low temperature PL results show that similar high quality GaN layers can be achieved on both annealed O-face and Zn-face ZnO substrates. The prospect of the device applications of GaN epitaxy on ZnO, including AlGaN/GaN MODFET structure on ZnO and GAN/ZnO based p-n junction were discussed.

Rights

© The Author

Is Part Of

VCU University Archives

Is Part Of

VCU Theses and Dissertations

Date of Submission

June 2008