Defense Date

2010

Document Type

Thesis

Degree Name

Master of Science

Department

Physics

First Advisor

Alison Baski

Abstract

Gallium nitride is an important III-V semiconductor which is used in many optoelectronic and high-frequency devices. The nature of the GaN surface and its electrical characteristics can impact the performance of such devices. In this study, several GaN surfaces are locally charged using an atomic force microscope, and then subsequently studied by measuring the surface potential with scanning Kelvin probe microscopy (SKPM). The charging and discharging behavior of the surface appears to be strongly influenced by surface preparation and the presence of a surface oxide layer. If a substantial oxide layer exists, then both positive and negative charging is possible on n-type and p-type samples. Surface treatments and photoemission spectroscopy (XPS) data confirm the presence and influence of the oxide layer on surface charging behavior. In the case of forward-bias charging, a small change in surface contact potential (0.1 – 0.3 eV) is observed that is primarily due to a small voltage drop across the surface oxide. Reverse-bias charging produces a substantially larger change in surface potential (~1 – 3 eV) that must be explained by a large increase in surface band bending. Temperature-dependent SKPM measurements also indicate that the decay behavior of deposited surface charge in dark involves a thermionic mechanism.

Rights

© The Author

Is Part Of

VCU University Archives

Is Part Of

VCU Theses and Dissertations

Date of Submission

May 2010

Available for download on Thursday, May 14, 2020

Included in

Physics Commons

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