Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors

Authors

Michael A. Reshchikov, Virginia Commonwealth UniversityFollow

Document Type

Article

Original Publication Date

2014

Journal/Book/Conference Title

Journal of Applied Physics

Volume

115

Issue

1

DOI of Original Publication

10.1063/1.4838038

Comments

Originally published at http://dx.doi.org/10.1063/1.4838038

Date of Submission

October 2015

Abstract

Mechanisms of thermal quenching of photoluminescence (PL) related to defects in semiconductors are analyzed. We conclude that the Schön-Klasens (multi-center) mechanism of the thermal quenching of PL is much more common for defects in III–V and II–VI semiconductors as compared to the Seitz-Mott (one-center) mechanism. The temperature dependencies of PL are simulated with a phenomenological model. In its simplest version, three types of defects are included: a shallow donor, an acceptor responsible for the PL, and a nonradiative center that has the highest recombination efficiency. The case of abrupt and tunable thermal quenching of PL is considered in more detail. This phenomenon is predicted to occur in high-resistivity semiconductors. It is caused by a sudden redirection of the recombination flow from a radiative acceptor to a nonradiative defect.

Rights

Reshchikov, M. A. Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors. Journal of Applied Physics, 115, 012010 (2014). Copyright © 2014 AIP Publishing LLC.

Is Part Of

VCU Physics Publications