Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth

Authors

J. C. Moore, Virginia Commonwealth University
V. Kasliwal, Virginia Commonwealth University
A. A. Baski, Virginia Commonwealth UniversityFollow
X. Ni, Virginia Commonwealth UniversityFollow
Ü. Özgür, Virginia Commonwealth UniversityFollow
Hadis Morkoç, Virginia Commonwealth UniversityFollow

Document Type

Article

Original Publication Date

2007

Journal/Book/Conference Title

Applied Physics Letters

Volume

90

Issue

1

DOI of Original Publication

10.1063/1.2429901

Comments

Originally published at http://dx.doi.org/10.1063/1.2429901

Date of Submission

April 2015

Abstract

Conductive atomic force microscopy and near-field optical microscopy (NSOM) were used to study the morphology, conduction, and optical properties of a-plane GaNfilmsgrown via epitaxial lateral overgrowth (ELO) by metal organic chemical vapor deposition. The AFM images for the coalesced ELOfilms show undulations, where the window regions appear as depressions with a high density of surface pits. At reverse bias below 12V, very low uniform conduction (2pA) is seen in the window regions. Above 20V, a lower-quality sample shows localized sites inside the window regions with significant leakage, indicating a correlation between the presence of surface pits and leakage sites. Room temperature NSOM studies explicitly showed enhanced optical quality in the wing regions of the overgrown GaN due to a reduced density of dislocations, with the wings and the windows clearly discernible from near-field photoluminescence mapping.

Rights

Moore, J. C., Kasliwal, V., Baski, A. A., et al. Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth. Applied Physics Letters, 90, 011913 (2007). Copyright © 2007 AIP Publishing LLC.

Is Part Of

VCU Physics Publications