Document Type
Article
Original Publication Date
2012
Journal/Book/Conference Title
Applied Physics Letters
Volume
101
Issue
8
DOI of Original Publication
10.1063/1.4747203
Date of Submission
March 2015
Abstract
The band bending in a Mg-doped, p-type GaN film grown by hydride vapor phase epitaxy was studied at various temperatures. At 295 K, the band bending in dark was calculated to be approximately −1.5 eV. However, when the sample was heated to 600 K for 1 h in dark before performing a measurement at 295 K, the calculated value of band bending in dark became about −2.0 eV. These results are explained by the fact that increasing the sample temperature exponentially increases the rate at which the band bending restores and allows for a more accurate value of band bending to be measured.
Rights
Foussekis, M., McNamara, J. D., Baski, A. A., et al. Temperature-dependent Kelvin probe measurements of band bending inp-type GaN. Applied Physics Letters, 101, 082104 (2012). Copyright © 2012 AIP Publishing LLC.
Is Part Of
VCU Physics Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.4747203