Subpicosecond time-resolved Raman studies of field-induced transient transport in an InxGa1−xAs-based p-i-n semiconductor nanostructure

Authors

K. T. Tsen, Arizona State University at the Tempe CampusFollow
Juliann G. Kiang, Uniformed Services University of the Health Sciences
D. K. Ferry, Arizona State University at the Tempe Campus
Hadis Morkoç, Virginia Commonwealth UniversityFollow

Document Type

Article

Original Publication Date

2006

Journal/Book/Conference Title

Applied Physics Letters

Volume

89

Issue

26

DOI of Original Publication

10.1063/1.2420782

Comments

Originally published at http://dx.doi.org/10.1063/1.2420782

Date of Submission

April 2015

Abstract

Electron transient transport in an InxGa1−xAs-based (x=0.53) p-i-nnanostructure under the application of an electric field has been studied by time-resolvedRaman spectroscopy on a subpicosecond time scale and at T=300K. The experimental results reveal the time evolution of the electron distribution function and electron drift velocity with subpicosecond time resolution. These experimental results are compared with those of both InP-based and GaAs-based p-i-nnanostructures and provide a consistent understanding and better insight of electron transient transport phenomena in semiconductors.

Rights

Tsen, K. T., Kiang, J. G., Ferry, D. K., et al. Subpicosecond time-resolved Raman studies of field-induced transient transport in an InxGa1−xAs-based p-i-n semiconductor nanostructure. Applied Physics Letters, 89, 262101 (2006). Copyright © 2006 AIP Publishing LLC.

Is Part Of

VCU Physics Publications