Determination of acceptor concentration in GaN from photoluminescence

Authors

Michael A. Reshchikov, Virginia Commonwealth UniversityFollow

Document Type

Article

Original Publication Date

2006

Journal/Book/Conference Title

Applied Physics Letters

Volume

88

Issue

20

DOI of Original Publication

10.1063/1.2204835

Comments

Originally published at http://dx.doi.org/10.1063/1.2204835

Date of Submission

April 2015

Abstract

The concentration of the acceptor responsible for the yellow luminescence (YL) band at about 2.2eV in GaN is determined from photoluminescence. The YL band intensity increases linearly with excitation power density and partially saturates above some critical value. The dependence is quantitatively described within a phenomenological model accounting for recombination statistics in GaN layer and saturation of acceptors with photogenerated holes. The incomplete saturation of the YL intensity at high excitation intensities is explained by gradual saturation of acceptors at different distances from the sample surface. The identity of deep and shallow acceptors in GaN is discussed.

Rights

Reshchikov, M.A. Determination of acceptor concentration in GaN from photoluminescence. Applied Physics Letters, 88, 202104 (2006). Copyright © 2006 AIP Publishing LLC.

Is Part Of

VCU Physics Publications