Document Type
Article
Original Publication Date
2005
Journal/Book/Conference Title
Applied Physics Letters
Volume
86
Issue
12
DOI of Original Publication
10.1063/1.1890482
Date of Submission
April 2015
Abstract
We study the effect of introducing hydrogen gas through the rf-plasma source during plasma-assisted molecular-beam epitaxy of GaN(0001). The well-known smooth-to-rough transition that occurs for this surface as a function of decreasing Ga flux in the absence of H is found to persist even with H present, although the critical Ga flux for this transition increases. Under Ga-rich conditions, the presence of hydrogen is found to induce step bunching (facetting) on the surface. Conductive atomic force microscopy reveals that leakage current through dislocation cores is significantly reduced when hydrogen is present during the growth.
Rights
Dong, Y., Feenstra, R.M., Greve, D.W., et al. Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 86, 121914 (2005). Copyright © 2005 AIP Publishing LLC.
Is Part Of
VCU Physics Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.1890482