Original Publication Date
Journal of Applied Physics
Date of Submission
Contactless thermally stimulated lifetime measurements were performed on detector-grade Cd1−xZnxTe (x∼0.1) crystals using a pulsed lasermicrowavecavityperturbation method. The carrier lifetime decreased from approximately 30 μs at 110 K to 4 μs at 160 K, and then remained relatively constant from 160 to 300 K. The sudden drop in carrier lifetime within a particular temperature range is consistent with the thermal activation of a charge trap with a detrapping time longer than the carrier lifetime. The maximum trap activation temperature and the minimum detrapping time are estimated from the lifetime versus temperature curve to be approximately 160 K and 10−6 s, respectively.
Kessick, R., Tepper, G., Lee, E., et al. Contactless thermally stimulated lifetime measurements in detector-grade cadmium zinc telluride. Journal of Applied Physics 87, 2408 (2000). Copyright © 2000 AIP Publishing LLC.
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VCU Chemical and Life Science Engineering Publications