Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ion irradiation was studied by means of photoluminescence(PL) and resonant Raman scattering (RRS) spectroscopy. A nanostructuring induced enhancement of the GaN radiation hardness by more than one order of magnitude was derived from the PL and RRS analyses. These findings show that electrochemical nanostructuring of GaN layers is a potentially attractive technology for the development of radiation hard devices.
Ursaki, V. V., Tiginyanu, I. M., Volciuc, O., et al. Nanostructuring induced enhancement of radiation hardness in GaN epilayers. Applied Physics Letters, 90, 161908 (2007). Copyright © 2007 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications