Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
The conduction band offset of n-ZnO∕n-6H-SiCheterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured by a variety of methods. Temperature dependent current-voltage characteristic, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25, 1.1, and 1.22eV, respectively.
Alivov, Ya.I., Xiao, B., Fan, Q., et al. Band offset measurements of ZnO∕6H-SiC heterostructure system. Applied Physics Letters, 89, 152115 (2006). Copyright © 2006 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications