Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Intersubband transitions in GaN∕AlN short period superlattices prepared by molecular beam epitaxy were investigated using the optical absorption technique. The peak position wavelengths of these transitions are found to span the spectral range of 1.35–2.90μm for samples cut into 45° waveguides with GaNquantum well thicknesses ranging between 1.70 and2.41nm. The Fermi energy levels are estimated from the carrier concentrations, which were measured using an electrochemical capacitance-voltage profiler. The well widths were inferred from comparing the measured peak position energy of the intersubband transitions and the bound state energy levels calculated using the transfer matrix method.
DeCuir, E.A., Fred, E., Passmore, B.S., et al. Near-infrared wavelength intersubband transitions in GaN∕AlN short period superlattices. Applied Physics Letters, 89, 151112 (2006). Copyright © 2006 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Originally published at http://dx.doi.org/10.1063/1.2358929