Document Type

Article

Original Publication Date

2006

Journal/Book/Conference Title

Applied Physics Letters

Volume

89

Issue

15

DOI of Original Publication

10.1063/1.2359294

Comments

Originally published at http://dx.doi.org/10.1063/1.2359294

Date of Submission

April 2015

Abstract

Room temperature and temperature dependent current-voltage characteristics of Ni∕AuSchottky diodes fabricated on undoped GaN prepared with and without in situ SiNxnanonetwork by metal organic chemical vapor deposition have been studied. The features of the Schottky diodes depend strongly on the SiNx deposition conditions, namely, its thickness. Reduction in the point and line defect densities caused the Schottky barrier height to increase to1.13eV for 5min SiNx deposition time as compared to 0.78eV without SiNx nanonetwork. Similarly, the breakdown voltage also improved from 76V for the reference to 250V when SiNx nanonetwork was used. With optimized SiNx nanonetwork, full width at half maximum values of (0002) and (101¯2) x-ray rocking curves improved to 217 and 211arcsec, respectively, for a 5.5μm thick layer, as compared to 252 and 405arcsec for a reference sample of the same thickness, which are comparable to literature values. The photoluminescence linewidth also reduced to 2.5meV at 15K with free excitons A and B clearly resolvable.

Rights

Xie, J., Fu, Y., Ni, X., et al. I-V characteristics of Au∕Ni Schottky diodes on GaN with SiNx nanonetwork. Applied Physics Letters, 89, 152108 (2006). Copyright © 2006 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications

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