Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from1016to2×1019cm−3 . The lifetime has been found to decrease from 2.5ps , at low density, to0.35ps , at the highest density. The experimental findings should help resolve the recent controversy over the lifetime of LO phonon mode in GaN.
Tsen, K.T., Kiang, J.G., Ferry, D.K., et al. Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density. Applied Physics Letters, 89, 112111 (2006). Copyright © 2006 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications