Effect of hydrostatic pressure on the dc characteristics of AlGaN∕GaN heterojunction field effect transistors

Authors

Y. Liu, University of MinnesotaFollow
P. P. Ruden, University of Minnesota
J. Xie, Virginia Commonwealth UniversityFollow
Hadis Morkoç, Virginia Commonwealth UniversityFollow
K.-A. Son, Jet Propulsion Laboratory

Document Type

Article

Original Publication Date

2006

Journal/Book/Conference Title

Applied Physics Letters

Volume

88

Issue

1

DOI of Original Publication

10.1063/1.2161812

Comments

Originally published at http://dx.doi.org/10.1063/1.2161812

Date of Submission

April 2015

Abstract

We report the effect of compressive hydrostatic pressure on the current-voltage characteristics ofAlGaN∕GaNheterojunction field effect transistors (HFETs) on a sapphire substrate. The drain current increases with hydrostatic pressure and the maximum relative increase occurs when the gate bias is near threshold and drain bias is slightly larger than saturation bias. The increase of the drain current is associated with a pressure induced shift of the threshold voltage by −8.0mV∕kbar that is attributed to an increase of the polarizationcharge density at the AlGaN∕GaN interface due to the piezoelectric effect. The results demonstrate the considerable potential of AlGaN∕GaNHFETs for strain sensor applications.

Rights

Liu, Y., Ruden, P.P., Xie, J., et al. Effect of hydrostatic pressure on the dc characteristics of AlGaN∕GaN heterojunction field effect transistors. Applied Physics Letters, 88, 013505 (2006). Copyright © 2006 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications