Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
We report the effect of compressive hydrostatic pressure on the current-voltage characteristics ofAlGaN∕GaNheterojunction field effect transistors (HFETs) on a sapphire substrate. The drain current increases with hydrostatic pressure and the maximum relative increase occurs when the gate bias is near threshold and drain bias is slightly larger than saturation bias. The increase of the drain current is associated with a pressure induced shift of the threshold voltage by −8.0mV∕kbar that is attributed to an increase of the polarizationcharge density at the AlGaN∕GaN interface due to the piezoelectric effect. The results demonstrate the considerable potential of AlGaN∕GaNHFETs for strain sensor applications.
Liu, Y., Ruden, P.P., Xie, J., et al. Effect of hydrostatic pressure on the dc characteristics of AlGaN∕GaN heterojunction field effect transistors. Applied Physics Letters, 88, 013505 (2006). Copyright © 2006 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications