Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
High quality n-ZnOfilms on commercial p-type 6H–SiC substrates have been grown by plasma-assisted molecular-beam epitaxy, and n-ZnO∕p-SiCheterojunction mesa structures have been fabricated. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2×10−4A/cm2 at −10V, a breakdown voltage greater than 20V, a forward turn on voltage of ∼5V, and a forward current of ∼2A/cm2 at 8V. Photosensitivity of the diodes was studied at room temperature and a photoresponsivity of as high as 0.045A∕W at −7.5V reverse bias was observed for photonenergies higher than 3.0eV.
Alivov, Ya. I., Özgür, Ü., Doğan, S., et al. Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 86, 241108 (2005). Copyright © 2005 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications