Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy

Authors

Ya. I. Alivov, Virginia Commonwealth UniversityFollow
Ü. Özgür, Virginia Commonwealth UniversityFollow
S. Doğan, Virginia Commonwealth University
D. Johnstone, Virginia Commonwealth University
Vitaliy Avrutin, Virginia Commonwealth UniversityFollow
N. Onojima, Virginia Commonwealth University
C. Liu, Virginia Commonwealth University
J. Xie, Virginia Commonwealth UniversityFollow
Q. Fan, Virginia Commonwealth University
Hadis Morkoç, Virginia Commonwealth UniversityFollow

Document Type

Article

Original Publication Date

2005

Journal/Book/Conference Title

Applied Physics Letters

Volume

86

Issue

24

DOI of Original Publication

10.1063/1.1949730

Comments

Originally published at http://dx.doi.org/10.1063/1.1949730

Date of Submission

April 2015

Abstract

High quality n-ZnOfilms on commercial p-type 6H–SiC substrates have been grown by plasma-assisted molecular-beam epitaxy, and n-ZnO∕p-SiCheterojunction mesa structures have been fabricated. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2×10−4A/cm2 at −10V, a breakdown voltage greater than 20V, a forward turn on voltage of ∼5V, and a forward current of ∼2A/cm2 at 8V. Photosensitivity of the diodes was studied at room temperature and a photoresponsivity of as high as 0.045A∕W at −7.5V reverse bias was observed for photonenergies higher than 3.0eV.

Rights

Alivov, Ya. I., Özgür, Ü., Doğan, S., et al. Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 86, 241108 (2005). Copyright © 2005 AIP Publishing LLC.

Is Part Of

VCU Electrical and Computer Engineering Publications