Original Publication Date
Applied Physics Letters
DOI of Original Publication
Date of Submission
Deep level transient spectroscopy was used to investigate the thermal stability of electron traps in n-type GaN grown by metalorganic chemical vapor deposition. The concentration of traps at 160 and at 500K increased more than fivefold over the course of several 700Kanneal cycles, while a peak at 320K increased by a factor of only 1.19. The increase in the trap concentration with repeated annealing might be due to a mobile trap or loss of passivant. Hydrogen is very likely present in high concentration in the epilayer, and its passivating effects may be lost with annealing.
Johnstone, D., Doğan, S., LEach, J., et al. Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition. Applied Physics Letters, 85, 4085 (2004). Copyright © 2004 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications