Document Type

Article

Original Publication Date

2003

Journal/Book/Conference Title

Physical Review B

Volume

68

Issue

11

DOI of Original Publication

10.1103/PhysRevB.68.115316

Comments

Originally published by the American Physical Society at: http://dx.doi.org/10.1103/PhysRevB.68.115316

Date of Submission

May 2015

Abstract

We study the conductance modulation of gate controlled electron spin interferometers (also known as spin field effect transistors) based on the Rashba spin–orbit coupling effect. It is found that the modulation is dominated by Ramsauer (or Fabry-Perot) type transmission resonances rather than the Rashba effect in typical structures. These transmission resonances are due to reflections at the interferometer’s contacts caused by large interface potential barriers and effective mass mismatch between the contact material and the semiconductor. They are particularly strong in quasi-one-dimensional structures which, in fact, are preferred for spin interferometers because of the energy independence of the spin precession angle. Thus, unless particular care is taken to eliminate Ramsauer resonances by proper contact engineering, any observed conductance modulation of spin interferometers may not have its origin in the Rashba effect.

Rights

Cahay, M. and Bandyopadhyay, S. Conductance modulation of spin interferometers. Physical Review B, 68, 115316 (2003). Copyright © 2003 American Physical Society.

Is Part Of

VCU Electrical and Computer Engineering Publications

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