Document Type

Article

Original Publication Date

2010

Journal/Book/Conference Title

Journal of Applied Physics

Volume

107

Issue

8

DOI of Original Publication

10.1063/1.3330627

Comments

Originally published at http://dx.doi.org/10.1063/1.3330627

Date of Submission

October 2015

Abstract

Due to growth temperature differences during deposition of GaN heterostructures utilizing InAlN barriers, an inadvertent parasitic GaN layer can form in the InAlN barrier layer. In structures utilizing AlN spacer layers, this parasitic layer acts as a second conduction channel with a carrier density dependent upon polarization charges and lattice strain as well as the surface potential. The effect of an additional GaN spacer layer in InAlN/AlN/GaN structures is assessed using simulations, electron-microscopy observations, magnetoconductivity measurements with gated Hall bar samples, and with quantitative mobility spectrum analysis. We propose a possible formation mechanism for the parasitic layer, and note that although the additional unintended layer may have beneficial aspects, we discuss a strategy to prevent its occurrence.

Rights

Leach, J. H., Ni, X., & Li, X., et al. Bias dependent two-channel conduction in InAlN/AlN/GaN structures. Journal of Applied Physics, 107, 083706 (2010). Copyright © 2010 American Institute of Physics.

Is Part Of

VCU Electrical and Computer Engineering Publications

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