Document Type
Article
Original Publication Date
2012
Journal/Book/Conference Title
Journal of Applied Physics
Volume
112
Issue
3
DOI of Original Publication
10.1063/1.4742984
Date of Submission
October 2015
Abstract
Electrical behavior of Sb in ZnO:Sb layers doped in a wide concentration range was studied using temperature dependent Hall effect measurements. The layers were grown by plasma-enhanced molecular beam epitaxy, and the Sb concentration was changed by varying the Sb flux, resulting in electron concentrations in the range of 1016 to nearly 1020 cm−3. Upon annealing, the electron concentration increased slightly and more notable was that the electron mobility significantly improved, reaching a room-temperature value of 110 cm2/V s and a low-temperature value of 145 cm2/V s, close to the maximum of ∼155 cm2/V s set by ionized impurity scattering. Hall data and structural data suggest that Sb predominantly occupies Zn sublattice positions and acts as a shallow donor in the whole concentration range studied. In the layers with high Sb content (∼1 at. %), acceptor-type compensating defects (possibly Sb on oxygen sites and/or point-defect complexes involving SbO) are formed. The increase of electron concentration with increasing oxygen pressure and the increase in ZnO:Sb lattice parameter at high Sb concentrations suggest that acceptors involving SbO rather than SbZn-2VZn complexes are responsible for the compensation of the donors.
Rights
Liu, H. Y., Izyumskaya, N., & Avrutin V., et al. Donor behavior of Sb in ZnO. Journal of Applied Physics, 112, 033706 (2012). Copyright © 2012 American Institute of Physics.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.4742984