Document Type


Original Publication Date


Journal/Book/Conference Title

Journal of Applied Physics





DOI of Original Publication



Originally published at

Date of Submission

October 2015


We grow Zn1−xMnxO∕Al2O3 (0⩽x⩽0.08)thin films on sapphire (0001) using radio-frequency sputtering deposition method with Ar and various N2 flow rates. We examine the effect of N2 codoping on the band gap and Mn-related midgap absorption of (Zn,Mn)O. Using spectroscopic ellipsometry, we measure pseudodielectric functions in the spectral range between 1 and 4.5eV. Using the model of Holden et al. [T. Holden et al., Phys. Rev. B56, 4037 (1997)], we determine the uniaxial (Zn,Mn)O dielectric function and the E0 band-gapenergy. The fitted band gap does not change appreciably with increasing Mn composition up to 2%. We find a very large broadening of both the E0 band gap and its exciton partner E0x peaks even for less than 2% of optically determined Mn composition. In ellipsometric spectra, we also find Mn-related 3eV optical structure. In particular, optical absorption spectra with varying N2 gas flow rate show that the Mn-related peak intensity decreases with increasing N2 flux. The decrease of the 3eV Mn-related peak intensity is attributed to increasing N2 flow rate and Mn–N hybridization.


Lee, G. S., Lee, H. S., Kang, T. D., et al. Spectroscopic ellipsometry and absorption study of Zn1−xMnxO∕Al2O3 (0⩽x⩽0.08) thin films. Journal of Applied Physics 99, 113532 (2006). Copyright © 2006 AIP Publishing LLC.

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VCU Electrical and Computer Engineering Publications