Document Type
Article
Original Publication Date
2002
Journal/Book/Conference Title
Journal of Applied Physics
Volume
92
Issue
8
DOI of Original Publication
10.1063/1.1508420
Date of Submission
October 2015
Abstract
Molecular-beam epitaxy grown AlxGa1−xN alloys covering the entire range of alloy compositions, 0⩽x⩽1, have been used to determine the alloy band gap dependence on its composition. The Alchemical composition was deduced from secondary ion mass spectroscopy and Rutherford backscattering. The composition was also inferred from x-ray diffraction. The band gap of the alloy was extracted from low temperature optical reflectance measurements which are relatively more accurate than photoluminescence. Fitting of the band gap data resulted in a bowing parameter of b=1.0 eV over the entire composition range. The improved accuracy of the composition and band gap determination and the largest range of the Al composition over which our study has been conducted increase our confidence in this bowing parameter.
Rights
Yun, F., Reshchikov, M. A., He, L., et al. Energy band bowing parameter in AlxGa1-xN alloys. Journal of Applied Physics 92, 4837 (2002). Copyright © 2002 AIP Publishing LLC.
Is Part Of
VCU Electrical and Computer Engineering Publications
Comments
Originally published at http://dx.doi.org/10.1063/1.1508420